The shrine of knowledge.


IGBT. (Insulated Gate Bipolar Transistor) A power transistor that has characteristics of both MOSFET and bipolar junction transistors (BJTs).

Igbt is described in multiple online sources, as addition to our editors' articles, see section below for printable documents, Igbt books and related discussion.

Suggested Pdf Resources

IGBT or MOSFET: Choose Wisely
making process. Device Evolution: Bipolar Transistors, MOSFETs and IGBTs The IGBT is a cross between the bipolar and MOSFET transistors (see figure 1).
FETs and IGBTs in most applications and, if the present As far as driving IGBT is concerned, it resembles a MOS- MOSFET apply equally well to an IGBT.
AN-9020 IGBT Basic II
AN-9016 IGBT Basics 1
Insulated Gate Bipolar Transistor (IGBT) Basics

Suggested News Resources

Alpha and Omega Semiconductor Introduces First Generation AlphaIGBT(TM
The AlphaIGBT(TM) platform incorporates the world's thinnest IGBT devices fabricated on large diameter 200mm wafers, combined with cutting-edge deep trench technology to raise the bar for IGBT performance.
IXYS Introduces New Rugged and Fast 1200V High-Gain (XPT) IGBTs
The combination of XPT IGBT and IXYS' Sonic-FRDTM results in an optimal match for reduced turn-off losses.
US Patent Issued to Powerwise Group on Aug. 23 for "Power Supply for Igbt/fet
"Power Supply for Igbt/fet Drivers" was invented by John L. Lumsden (Boca Raton, Fla.).
AgileSwitch Releases 14-Pin IGBT Driver for Renewable Energy
Philadelphia, PA – August 22,2011 – AgileSwitch, LLC announced today the release of its 14-pin IGBT drivers, designed from the ground up to be compatible with both Fuji and SemiKron IGBTs.
IXYS launches new 1200V high-gain IGBTs
On August 4th, 2011, IXYS Corporation (Milpitas, California, US) announced the expansion of its XPT insulated gate bipolar transistor (IGBT) product line with the release of new discrete high-speed, high-gain 1200V products.

Suggested Web Resources

Insulated-gate bipolar transistor - Wikipedia, the free encyclopedia
The insulated gate bipolar transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
International Rectifier - Insulated Gate Bipolar Transistor (IGBT
IGBT or MOSFET: Choose Wisely
making process.
IGBT tutorial: Part 1 - Selection
Mar 8, 2007 IGBTs are encroaching upon the high frequency, high efficiency domain of power MOSFETs.
IGBTs - STMicroelectronics

Great care has been taken to prepare the information on this page. Elements of the content come from factual and lexical knowledge databases, library and third-party sources. We appreciate your suggestions and comments on further improvements of the site.

Discussion Forum
Place for your opinion