Ingan Indium Gallium Nitride
- Indium gallium nitride barriers enhance LED power and efficiency
- South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. Phys.
- Professor Hanington's Speaking of Science: Kids Love LEDs
- The two main types of LEDs presently used for lighting systems are aluminum gallium indium phosphide (AlGaInP) for red, orange and yellow LEDs and indium gallium nitride (InGaN) composition for green, blue and white LEDs. Slight changes in the ...
- Triangular nanostructure semi-polar gallium nitride light-emitting diodes
- Further growth consisted of n-GaN electron injection, four indium gallium nitride (InGaN) quantum wells (QWs) in GaN barriers (3nm/9nm), and finally a p-GaN contact.
- Nanomaterials for sensing, energy generation, and energy harvesting
- Though not a metal-oxide nanostructure, recent results on the use of an InN/InGaN (indium nitride/indium gallium nitride) quantum-dot photoelectrode show the possibility of efficient hydrogen generation via water splitting using visible light at zero bias.
- Hole injection from V-pits into indium gallium nitride quantum wells
- Researchers at Nanchang University in China have been studying the effect of V-pits in indium gallium nitride (InGaN) light-emitting diodes (LEDs) on electroluminescence [Xiaoming Wu, Junlin Liu, and Fengyi Jiang, J. Appl. Phys.
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